Joined January 2019
10 Photos and videos
Pinned Tweet
🇪🇺 This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 780302
Metastable ferroelectricity driven by depolarization fields in ultrathin Hf0.5Zr0.5O2. rdcu.be/cRly8 #Nature #CommunicationsPhysics #3eFerro #BeFerroSynaptic #HfO2
2
3εFERRO_H2020 retweeted
In hafnia based microscopic ferroelectric capacitors, synchrotron X-ray photoemission electron microscopy has revealed the formation and evolution of oxygen vacancies as a function of field cycling. @3eFerro #HfO2 #H2020 bit.ly/3QPbS6E

1
3εFERRO_H2020 retweeted
Call for Contributions DATE 2022 Friday Workshop on Ferroelectronics Virtual Event Friday March 18th 2022 Submission deadline: Dec. 17th 2021 lnkd.in/dXfyGrCg
1
1
Final and review meetings of the H2020 project 3eFERRO last week at CEA-Leti. The 3eFERRO project finished on June 30th 2021 and the website provides the full publication list. 3eferro.eu #Ferroelectric #IoT #ecofriendlytechnologies #HfO2 #nonvolatilememory #H2020
1
4
2 year post-doc at CEA to study the control of conductivity in β-Ga2O3 using the ferroelectric polarization of HfZrO2. The work focuses on the electronic structure at the interface using in operando photoelectron spectroscopy. CV to nick.barrett@cea.fr bit.ly/postdoc_CEA
1
2
A funded PhD position is open to focus on the characterization and understanding of the chemical and electronic structure of the electrode/BaSrTiO3 interface in tunable capacitors for 5G applications with CEA Saclay, CV to nick.barrett@cea.fr. cutt.ly/5G-PhD
4
5
NEW: Check out our latest newsletter now available on our website. 3eferro.eu/images/pdf/Newsle…

Very proud that our article was the most downloaded (1454 times) in the dielectrics, ferroelectrics and multiferroics section of J. Appl. Phys. in 2020. Hopefully with the efforts of all these groups we’ll see new low power memories soon! aip.scitation.org/doi/10.106…

2
Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films. aip.scitation.org/doi/10.106…

A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective aip.scitation.org/doi/10.106…

Polarization switching in thin doped HfO2 ferroelectric layers. aip.scitation.org/doi/10.106…

When gate induced drain leakage becomes the means to make a robust frequency doubling device using ferroelectric HfO2 based FeFET. #FE_HfO2 #FeFET #NatureElectronics nature.com/articles/s41928-0…
2
Enhanced Ferroelectric Polarization in TiN/HfO2/TiN Capacitors by Interface Design pubs.acs.org/doi/10.1021/acs…
1
1
A comprehensive study of imprint in HZO MFS capacitors limiting reliability of FeFETs. Injection of carriers at the top interface dominate imprint but the clean Ge/HZO bottom interface helps reducing it. This depends on the crystallization annealing method doi.org/10.1063/5.0029657
Glad to announce that we have just completed accurate #HAXPES analysis on different technologically relevant structures provided by #3eFERRO partners. Many thanks to synchrotron #Soleil and #GALAXIES beamline. #3eFERRO #FE_hafnia #Synchrotron_Soleil☀️🧐💪✔️
3
3εFERRO_H2020 retweeted
GF semiconductors are accelerating the digital future. Learn how our chips are made at: bbc.com/reel/playlist/made-o…
2
2