@InnoscienceTech profile picture
Innoscience @InnoscienceTech

Innoscience is the largest 8-inch Integrated Device Manufacturer (IDM) fully focused on GaN technology in the world.

Joined February 2022
  • Tweets 428
  • Following 371
  • Followers 179
269 Photos and videos
Our INN100W135A-Q and the ultra-compact INN100W800A-Q devices are specifically tailored for the requirements of L2 /L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to 1/5 of those of silicon solutions. buff.ly/3ZiHyGJ
1
154
Our new 100-150V top-side cooled GaN power transistors reduce junction temperatures by 25%. With their excellent electrical properties and ultra-miniaturized packaging, our medium and low-voltage GaN parts have found adoption in a variety of applications buff.ly/4h4rjE6.
132
Let's start the year with our GaN portfolio, covering LV, MV, and HV GaN available in discrete and integrated (SolidGaN) solutions. We also offer our bi-directional VGaN, which replaces two Si MOSFETs in BMS applications, and our GaN gate drivers. buff.ly/3PlWYoW
1
97
This piece explores how GaN evolved into a complete solution for a wide range of applications. Once only considered suitable for specific applications, our GaN devices are found in everything from compact mobile chargers to LED drivers and power supplies. buff.ly/3PjI6r7
1
73
Our proprietary 8-inch GaN-on-Si epi-buffer technology is optimized for both high-voltage (HV) and low-voltage (LV) devices. By controlling our in-house epi-technology, we can quickly adapt the epi-process to meet specific needs or applications. buff.ly/3BkHC0m
65
Wishing all our partners, customers, and team members a joyful holiday season! 🎄 As we reflect on a year of growth and innovation, we're grateful for the continued trust in our GaN technology, which is revolutionizing power electronics!
49
Our INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13mm x 1.63mm and 0.9mm x 0.9mm respectively, offer significant advantages in terms of size and power efficiency. Click here for more information: buff.ly/3ZiHyGJ
43
This 250W GaN Charger teardown shows how our 650V/80mΩ devices deliver high performance and compact design. Click here to learn more: buff.ly/41usND7
32
Let's revisit this article from Power Electronics World: 'GaN Blossoms into Full Technology Solutions,' which highlights the advances of GaN in various applications, from datacenters to LED drivers and more. Enjoy reading it! Read it here: buff.ly/3Zh2BJz
35
We’ve introduced four new GaN-on-Silicon enhancement mode HEMTs in our En-FCQFN top-side cooling package, offering significant improvements in thermal performance. Read the full article here: buff.ly/3D3gS59
38
Today’s the day! Dr. Denis Marcon will be presenting “Price competitive GaN power devices are the technology of choice for high-efficiency, compact and cost-effective power systems” at Bodo’s Wide Bandgap (WBG) Event at 10:15 AM.
44
Our new Battery Management System (BMS) is designed specifically for electric three-wheelers and e-bikes, powered by our 100 V GaN devices. The INV100FQ030A VGaN IC supports two-way pass-through, two-way cut-off and no-reverse-recovery modes of operation. buff.ly/49aymbH
33
On December 4th, Dr. Denis Marcon will present “Price competitive GaN power devices are the technology of choice for high-efficiency, compact and cost-effective power systems” at Bodo’s Wide Bandgap (WBG) Event. Click here for more information: bodoswbg.com/gan.aspx
42
We will be presenting at Bodo’s Wide Bandgap Event on December 4th. Dr. Denis Marcon, General Manager of Innoscience Europe, will discuss how GaN power devices outperform traditional silicon, with a Figure of Merit (Ron x Qg) that is ten times better. bodoswbg.com/gan.aspx
43
This white paper explores how Class-D audio amplifiers are achieving new performance standards with our Gallium Nitride (GaN) technology. Our GaN devices enhance efficiency, reduce size and weight, and deliver superior output quality in Class-D amplifiers. richardsonrfpd.com/ep-white-…

The Evolution of Class-D Audio Amplifiers with Gallium Nitride Technology - Richardson RFPD

Discover how Skyworks' high-performance isolated gate drivers and Innoscience's 100V-150V GaN devices are leading generation of high-fidelity audio amplifiers.

richardsonrfpd.com
35
It’s happening today! Join Dr. Denis Marcon at 10:40 AM at the Power Electronics Forum during electronica for his presentation: "Enabling Smaller, More Efficient and Cheaper Power Converter Systems with Price-Competitive GaN Power Devices." See you there!
39
Our INN100W135A-Q and smaller package INN100W800A-Q are specifically tailored for the requirements of L2 /L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. wnie.online/innoscience-expa…
29
Our new battery management system (BMS) solutions are designed to meet the growing demand for eco-friendly travel, mobile energy storage, and compact power applications. Click here to read the full article: compoundsemiconductor.net/ar…
38
Dr. Jan Šonský will give a tutorial at the ECPE (European Center for Power Electronics) in Manchester on October 19th and 20th: "Wide Bandgap User Training - GaN-based Power Electronics | ECPE Tutorial." More information can be found here: ecpe.org/events/workshops-tu…
23
Innoscience retweeted
Semiconductor Today
@Semiconductor_T
1 Nov 2024
Innoscience expands 100V automotive-grade GaN device portfolio. @InnoscienceTech semiconductor-today.com/news…
1
1
158
Load more