In multilayer NbSe2, the observed superconducting diode effect arises from the variation of the proton concentration gradient, which suppresses the critical current in one direction and enhances it in the other.
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ALT Figure with six graphs. The first shows gate-dependent R-T curves in a NbSe2 multilayer, showing how the temperature decreases as the gate voltage is swept. The second shows gate-dependent Hall resistance. The third shows a temperature-carrier density phase diagram as the carrier type changes the sign at a critical voltage. The fourth shows the in-plane magnetic field dependent resistance under various temperatures. The fifth shows the in-plane magnetic field dependent resistance under various temperatures. The last graph shows a theoretical fitting of the temperature dependent upper critical field using a formula.