The role of SiCtech at “YESvGaN” is the definition of the requirements, from the industrial pov, of the vertical GaN power devices as well as the development of a dedicated test bench and selected industrial prototypes for testing and qualification of the vertical GaN Mosfets.

The objective of the project “YESvGaN (Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost)” is the development of vertical GaN power MOSFETs for efficient processing powers higher than 10 kW.

SiCtech takes part in the EU H2020-ECSEL-2020-2-RIA project “YESvGaN (Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost)”, led by the German company Robert BOSCH GmbH, with 23 participants from countries around Europe.

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