Group Manager CMOS Integrated RF & AI @FraunhoferIPMS CNT # electron devices, nonvolatile memories, neuromorphic computing, microwave
Joined December 2011
- Tweets 521
- Following 703
- Followers 336
- Likes 2,061
19 Photos and videos
31 Dec 2025
New Publication in Nature Communications
I’m excited to share our recent article:
“Probabilistic Greedy Algorithm Solver Using Magnetic Tunneling Junctions for the Traveling Salesman Problem”
🔗 nature.com/articles/s41467-0…
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4 Jan 2025
Demonstration of high-reconfigurability and low-power strong physical unclonable function empowered by FeFET cycle-to-cycle variation and charge-domain computing
nature.com/articles/s41467-0… @NatureComms @Selinitter
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8 Jun 2024
Deep random forest with ferroelectric analog content addressable memory | Science Advances science.org/doi/10.1126/scia…
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Thomas Kämpfe retweeted
18 Mar 2024
Yin et al. report a #ferroelectric field effect transistor based compute-in-memory annealer for solving larger-scale combinatorial optimization problems through algorithm-hardware co-design with a #FeFET #chip.
Now out👉 @NatureComms nature.com/articles/s41467-0…
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18 Mar 2024
In a new study, we demonstrate ferroelectric field effect transistor (FeFET) based compute-in-memory (CiM) macro for optimization problems with high energy efficiency and scalability. @NatureComms @Selinitter nature.com/articles/s41467-0…
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Thomas Kämpfe retweeted
31 Oct 2023
8th #IEEE #EDTM 2024 Call for Paper deadline extended from 30th October, 2023 to 14th November, 2023
@yogeshs36114738 , @MayankIISc, @shubhamsahay93
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Thomas Kämpfe retweeted
11 Oct 2023
.@TUM_AIPro, @yogeshs36114738 et al. develop a multi-level #FeFET #crossbar for multi-bit #MAC operations with experimental validation at 28nm achieving 96.6% accuracy and high performance of 885 TOPS/W #inmemorycomputing
Now out👉@NatureComms
nature.com/articles/s41467-0…
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Thomas Kämpfe retweeted
11 Oct 2023
Our research on IMC using FeFET published in Nature Communications - "First Demonstration of In-Memory Computing Crossbar using Multi-level Cell FeFET".
doi.org/10.1038/s41467-023-4…
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Thomas Kämpfe retweeted
13 Sep 2023
Die starke Mikroelektronikforschung in Sachsen ist mit ein wesentlicher Grund für die Ansiedlung so vieler Chipfabriken im Freistaat, meint Wissenschaftsminister Gemkow:
oiger.de/2023/09/13/minister…
@SMWK_SN @FraunhoferENAS @FraunhoferIPMS @NaMLab_gGmbH @HZDR_Dresden @silicon
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Thomas Kämpfe retweeted
14 Aug 2023
8th #IEEE #EDTM2024 #hiltonhotels #Bangalore
@yogeshs36114738, @MayankIISc, @shubhamsahay93, @GangulyUdaya
Introduce our expert #technical #program committee member in the field: #Design/System Technology Co-optimization (DTCO/STCO) from #Academia & #Semiconductor #Industries
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23 Jul 2023
Further evidence for ferroelastic switching in ferroelectric HfO2 layers, which might be the root-cause for their promoted wake-up effect. @FraunhoferIPMS @GFfab1 @tudresden_de pubs.aip.org/aip/apl/article…
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23 Jul 2023
In this paper we extend our 1F-1T concept to multi-level cell operation, demonstrating the compute efficiency increases by it @FraunhoferIPMS, strong collaboration with @iitmadras @GFfab1 @NYCU_official ieeexplore.ieee.org/document…
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30 Jun 2023
Was an interesting start to #LNDWDD with the podcast discussion „You Ask we Explain“ on the special tour of the mayor, podcast will soon be available
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22 Jun 2023
Was assisting today for #LNdW (long night of science) press conference by show-casing research activities at @FraunhoferIPMS
22 Jun 2023
Mit künstlichen Nerven, vergänglicher Kunst sowie schierer Mannes- und Frauenkraft locken Forscher am 30. Juni 2023 Zehntausende Dresdner zur Wissenschaftsnacht in ihre Labore
oiger.de/2023/06/22/wissensc…
@LangeNacht_DD #LNdW @stadt_dresden @tudresden_de @FraunhoferIPMS @HfBK_Dresden
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21 Jun 2023
In our new article in ACM Transactions on Design Automation of Electronic Systems we demonstrate a novel architecture called ProtFe for Secure Power Side-Channel Protection for FeFET Memories @TsinghuaEE @_RITEngineering @PennStateEECS @FraunhoferIPMS dl.acm.org/doi/10.1145/36045…
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28 May 2023
In this new preprint we demonstrate how it would be possible to use multi-level cell operation in FeFET for compute-in-memory operation to strongly improve compute efficiency by a ramp technique @FraunhoferIPMS @bosch @TU_Muenchen researchsquare.com/article/r…
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16 May 2023
Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFETs @FraunhoferIPMS @iitmadras @GFfab1 sciencedirect.com/science/ar…
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10 May 2023
In our new article in EDL, we present a novel 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme with extension to 3D operation @TsinghuaEE @FraunhoferIPMS @_RITEngineering @GeorgiaTech_ECE @CAS ieeexplore.ieee.org/document…
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10 May 2023
28 nm high-k-metal gate ferroelectric field effect transistors based — A comprehensive overview @FraunhoferIPMS @iitmadras @GFfab1 sciencedirect.com/science/ar…
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