SK HYNIX SELECTS TOKYO ELECTRON EQUIPMENT FOR 375-LAYER NAND DEPOSITION
SK Hynix to Mass-Produce Next-Generation 375-Layer 3D NAND by Year-End
SK Hynix will begin mass production of its next-generation 375-layer 3D NAND flash at the end of this year.
According to industry sources on the 11th, SK Hynix has completed production qualification of the 375-layer NAND and is preparing to transfer it to mass production lines. This is not a new fab expansion. Instead, a conversion investment is underway to switch existing production lines at the M15 fab in Cheongju (which currently produce 176-, 238-, and 321-layer products) over to the 375-layer product.
The 375-layer product was originally discussed as a 400-layer-class device. The layer count was lowered to 375 due to the high difficulty of mass-producing high-stack processes. As NAND layer counts rise, the difficulty of processes such as channel hole etching increases. An industry official said, "The product formerly referred to as 400-layer class has been revised to 375 layers," adding, "The roadmap from there leads to 480 layers and then 604 layers."
The key change is the adoption of molybdenum (Mo). Part of the tungsten (W) film used previously has been replaced with molybdenum. NAND increases capacity by vertically stacking hundreds of layers of charge-storing cells and the word lines that control them. At 375 layers, SK Hynix decided to switch part of the word line material — the metal gate electrodes controlling each cell layer — from tungsten to molybdenum.
Molybdenum is regarded as a material that can overcome tungsten's limitations in high-stack NAND. As layer counts increase, interconnects become thinner, and tungsten's electrical resistance rises as it scales down, slowing signal transmission. Molybdenum can achieve lower resistance than tungsten in miniaturized word line structures, delivering signals faster — meaning faster program and erase speeds. In particular, tungsten requires a barrier liner to be deposited before the fill, and since this liner is laid down at every layer, it causes thickness loss. Molybdenum can be filled directly without a barrier layer, enabling higher density.
The process difficulty is high, however. Molybdenum precursors are solid at room temperature, requiring technology to heat them to high temperatures and deliver them at a consistent volume and rate.
Samsung Electronics already applied molybdenum to its metal interconnect process starting with its 9th-generation 286-layer 3D NAND, which entered mass production in April 2024. Its next-generation 10th-gen 3D NAND exceeds 400 layers and is being prepared for commercialization in the second half of this year, with molybdenum applied to a larger number of process steps.
Samsung uses Lam Research equipment for molybdenum deposition. SK Hynix, after evaluating both Lam Research and Tokyo Electron (TEL), chose TEL's tools. Lam's equipment is a single-wafer type that processes one wafer at a time, while TEL's is a furnace type that deposits on roughly 100 wafers at once. The furnace approach is considered advantageous in terms of equipment price, footprint, and molybdenum consumption.
Air Liquide, Entegris, and Merck are reportedly set to supply molybdenum materials to SK Hynix. Among Korean companies, SK Specialty is also mentioned as a potential supplier. However, SK Specialty lacks its own storage and delivery systems, and discussions are reportedly underway for it to supply the material using Air Liquide's delivery system. SK Hynix is also said to be actively encouraging this cooperation between the two companies.
Molybdenum consumption for 3D NAND is expected to grow rapidly. The industry estimates that Samsung purchased around 4 tons last year and will purchase around 10 tons this year, rising to 25 tons in 2027, 40 tons in 2028, 60 tons in 2029, and 80 tons by 2030. SK Hynix, which begins using molybdenum in earnest next year, is estimated to start at around 4 tons per year.
Another industry official explained, "Unlike DRAM, the NAND industry still operates on profitability rather than volume," adding, "SK Hynix, likewise, has chosen the path of cutting output of older, lower-layer-count NAND and ramping 375-layer production to raise bit productivity and lower costs, rather than adding new capacity."