Dear quantum scientists and engineers,
let's review in this new post from our QTCAD® series here on LinkedIn, a study of electrically driven spin control using micromagnet EDSR on a industry device.
As spin qubits in silicon approach maturity, single-qubit gate control becomes a key design benchmark—especially when targeting scalable CMOS-compatible technologies. In our 2024 study, we explored electrically driven spin control using micromagnet EDSR in an industrial 28 nm FD-SOI quantum dot device developed in collaboration with STMicroelectronics.
Leveraging the extended capabilities of QTCAD®, we simulated:
• Magnetic-field-mediated spin-orbit coupling, enabling Rabi oscillations via in-plane gate fields
• Gate-bias-resolved matrix elements, predicting the interplay between qubit drive strength and leakage
• Time-domain dynamics, revealing MHz-range Rabi frequencies with sub-1% leakage using side-gate drives
• The impact of long gate-channel separation, a constraint imposed by industrial design rules, on EDSR efficiency
Despite stringent layout rules, QTCAD® accurately predicts that Rabi oscillations exceeding 4 MHz can be achieved while maintaining theoretical gate fidelities above the surface-code threshold. These findings confirm that technology computer-aided design of single-qubit gates is very much feasible prior to fabrication, and even necessary for device designers.
💡 To know more about QTCAD®, please enquire on info@nanoacademic.com and check out our online documentation here:
docs.nanoacademic.com/qtcad/
QTCAD® 2.0 brochure (English, also available in French and Japanese):
storage.googleapis.com/leafl…
📸 Illustrated in the Figure below: QTCAD®-simulated Rabi oscillations in a next-generation FD-SOI qubit device under side-gate-driven EDSR. The drive protocol yields a 4.7 MHz Rabi frequency with <0.4% leakage.
📖 Read the publication:
linkinghub.elsevier.com/retr…
#quantum #SpinQubits #EDSR #QuantumDesign #FDSOI #SiliconQubits #QuantumControl #QuantumTech #Innovation #MillionQubitEra